Samsung Announces World's Highest Density DRAM Chip

Samsung has announced the development of the world's first four gigabit (Gb) DDR3 DRAM chip. The part is built using 50 nanometer (nm) process technology.

Samsung says the 4Gb DDR3's high density combined with its lower level of power consumption will provide a reduction in electricity bills. It will also offer a reduction in maintenance fees and repair fees involving power suppliers and heat-emitting equipment.

The 4Gb DDR3 DRAM operates at 1.35 volts (V), thus improving its throughput by 20 percent over a 1.5V DDR3. Samsung claims in 16GB module configurations, 4Gb DDR3 can consume 40 percent less power than 2Gb DDR3 because of its higher density. Its maximum speed is 1.6 gigabits per second (Gbps).

By applying dual-die package technology, the new chip can deliver modules of up to 32GB - offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.

Samsung had announced the development of the world's first 50 nm-class 2Gb DDR3 DRAM in September 2008.

According to the market research firm International Data Corporation, DDR3 DRAM market will account for 29 percent of the total DRAM market in 2009 and 75 percent in 2011.